unisonic technologies co., ltd pzta06 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2016 unisonic technologies co., ltd qw-r207-031.a amplifier transistor ? features * collector-emitter voltage: v ceo =80v * collector dissipation: p d =350mw ? ordering information pin assignment ordering number package 1 2 3 packing PZTA06G-AA3-R sot-223 b c e tape reel note: pin assignment: b: base c: collector e: emitter ? marking
pzta06 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r207-031.a ? absolute maximum ratings ( t a =25 , unless otherwise specified) parameter symbol ratings unit collector base voltage v cbo 80 v collector emitter voltage v ceo 80 v emitter base voltage v ebo 4 v collector current - continuous i c 500 ma total device dissipation (note 2) 1000 mw derate above 25c p d 8 mw/c junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. device is mounted on fr-4 pcb 36181.5 mm, mounting pad for the collector lead minimum 6 cm 2 . ? thermal data parameter symbol ratings unit junction to ambient ja 125 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector emitter breakdown voltage (note 1) bv ceo i c =1.0ma, i b =0 80 v emitter base breakdown voltage bv ebo i e =100 a, i c =0 4 v collector cutoff current i ces v ce =60v, i b =0 0.1 a collector cutoff current i cbo v cb =80v, i e =0 0.1 a on characteristics v ce =1v , i c =10ma, 100 dc current gain h fe v ce =1v , i c =100ma, 100 collector emitter sa turation voltage v ce(sat) i c =100ma, i b =10ma 0.25 v base emitter on voltage v be(on) v ce =1v , i c =100ma, 1.2 v small-signal characteristics current gain bandwidth product (note2) f t v ce =2v, i c =10ma, f=100mhz 100 mhz notes: 1. pulse test: p w 300 s, duty cycle 2% 2. f t is defined as the frequency at which ihfei extrapolates to unity.
pzta06 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r207-031.a ? switching time test circuits turn-on time turn-off time 5.0s +10v 0 t r =3.0ns v in 5.0f r b 100 -1.0v r l +40v v cc output c s 6.0pf 100 5.0s t r =3.0ns v in 5.0f r b 100 +v bb r l +40v v cc output c s < 6.0pf 100 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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